IRF Transistor Datasheet, IRF Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF datasheet, IRF pdf, IRF data sheet, datasheet, data sheet, pdf, International Rectifier, V Single P-Channel HEXFET Power MOSFET in a. IRF Datasheet, IRF MOSFET P-Channel Transistor Datasheet, buy IRF Transistor.
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IRF Datasheet(PDF) – International Rectifier
Shipping cost cannot be combined. Get the item you ordered or get your money back. Have one to sell? You have chosen to irt the following item to a parts list:. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
Select a valid country. The foregoing information relates to product sold on, or after, the date shown below. International Rectifier Electronic Components Datasheet.
Q g Total Gate Charge. Taiwan Chinese Other Countries. With these improvements, multiple devices. A brand-new, unused, unopened, undamaged item in its original packaging where dataeheet is applicable. The SO-8 has been modified through a customized. C oss Output Capacitance. Source-Drain Ratings and Characteristics. See all ele-parts has no other items for sale. Learn more — opens in a new window or tab.
It will take working days weeks to receive for most area. The Manufacturers disclaim all irf including ief7416 warranties of merchantability or fitness for a particular purpose and are not liable for any damages arising from your use of or your inability to use the Information downloaded from this website.
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See other items More Learn More — opens in a new window or tab Returns: The package is designed for vapor phase, infra red, or wave soldering techniques. Will usually ship within 1 business day of receiving cleared payment — opens in a new window or tab. Free shipping is without a tracking number. Packaging should be the same as what is found in a retail store, unless the item is handmade urf7416 was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag.
The package is designed for vapor phase. With these improvements, multiple devices can be used in an application with dramatically reduced board space. Any international shipping and import charges are paid in part to Pitney Bowes Inc. See all condition definitions — opens irf a new window or tab See terms — opens in a daatasheet window or tab. Please enter a valid ZIP Code.
For additional information, see the Global Shipping Program terms and conditions — opens in a new window or tab Irf7461 amount includes applicable customs duties, taxes, brokerage and other fees. There are 32 items available. Seller assumes all responsibility for this listing. C rss Reverse Transfer Capacitance.
Read more about the condition. Junction and Storage Temperature Range. Other offers may also be available. View PDF for Mobile. Q rr Reverse RecoveryCharge. Q gs Gate-to-Source Charge. Back to home page. Shipping cost cannot be calculated.
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This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Q gd Gate-to-Drain “Miller” Charge. Sell now — Have one to sell? Save to an existing parts list Save to a new parts list.
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